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TPCP8504
TOSHIBA Transistor Silicon NPN Epitaxial Type
TPCP8504
High Speed Switching Applications DC-DC Converter Applications
* * * High DC current gain : hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation : VCE (sat) = 0.12 V (max) High-speed switching : tf = 25 ns (typ.)
0.475
1 4
Unit: mm
0.330.05 0.05 M A
8 5
2.40.1 0.65 2.90.1
B A S
0.05 M B
Absolute Maximum Ratings (Ta = 25C)
0.025
S
0.80.05 0.28 +0.1 -0.11
+0.13
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Note 2) Junction temperature Storage temperature range t = 10s DC DC (Note 1)
Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg
Rating 20 10 7 2.0 3.5 0.2 2.8 1.2 150 -55 to 150
Unit V V V A A W C C
1.Collector 2.Collector 3.Collector 4.Base
0.170.02
1.12 -0.12 1.12 +0.13 -0.12
Pulse (Note 1 )
5.Emitter 6.Collector 7.Collector 8.Collector
0.28 +0.1 -0.11
JEDEC JEITA TOSHIBA
2-3V1A
Weight: 0.017 g (typ.)
Note 1: Please use devices on condition that the junction temperature is below 150C. Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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2.80.1
TPCP8504
Figure 1. Circuit configuration (top view)
8 7 6 5
Figure 2.
Marking (Note 4)
8 7 6 5
8504
1 2 3 4
Note 4: on lower left on the marking indicates Pin 1. Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year)
Type
1 2 3 4
Lot No. (Weekly code)
Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = 20 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.2 A VCE = 2 V, IC = 0.6 A IC = 0.6 A, IB = 12 mA IC = 0.6 A, IB = 12 mA VCB = 10 V, IE = 0, f = 1MHz See Figure 3 circuit diagram VCC 6 V, RL = 10 - IB1 = -IB2 = 12 mA Min 10 400 200 Typ. 10 60 215 25 Max 100 100 1000 0.12 1.1 ns V V pF Unit nA nA V
Figure 3.
Switching Time Test Circuit & Timing Chart
20s VCC RL IB2 IB1 Output
IB1 Input
Duty cycle 1% IB2
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TPCP8504
IC - VCE
2.4 20 10000
hFE - IC
Common emitter VCE = 2 V Single nonrepetitive pulse Ta = 100C 1000 25 -55 100
(A)
2.0
60 40
10
IC
1.6
30
6 4 IB = 2 mA
Collector current
1.2
0.8
0.4
0 0
Common emitter Ta = 25C Single nonrepetitive pulse 0.2 0.4 0.6 0.8 1.0 1.2
DC current gain
hFE
8
10 0.001
0.01
0.1
1
10
Collector-emitter voltage
VCE
(V)
Collector current
IC
(A)
VCE (sat) - IC
1
VBE (sat) - IC
10 Common emitter = 50 Single nonrepetitive pulse
Collector-emitter saturation voltage VCE (sat) (V)
0.1 Ta = 100C
Base-emitter saturation voltage VBE (sat) (V)
Common emitter = 50 Single nonrepetitive pulse
1
Ta = -55C
25C 0.01 -55C
100C 25C
0.001 0.001
0.01
0.1
1
10
0.1 0.001
0.01
0.1
1
10
Collector current
IC
(A)
Collector current
IC
(A)
Ta = 100C
25
-55
IC - VBE
2.0 Common emitter VCE = 2 V Single nonrepetitive pulse 1.4
Pc - Ta
DC operation Ta = 25 C Mounted on an FR4 board glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
(W) PC Collector power dissipation
1.2 1.0 0.8 0.6 0.4 0.2 0 0
IC Collector current
1.2 0.8 0.4 0 0
(A)
1.6
0.4
0.8
1.2
1.6
20
40
60
80
100
120
140
160
Base-emitter voltage
VBE
(V)
Ambient temperature Ta (C)
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TPCP8504
rth - tw
1000
Transient thermal resistance rth(j-a) (C/W)
100
10 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) 0.01 0.1 1 10 100 1000
1 0.001
Pulse width
tw
(s)
Safe operating area
10 IC max (Pulsed)* 10 ms* 1 ms* 100 s*
(A)
IC max (Continuous) 1 100 ms* 10 s* DC operation Ta = 25C *: Single nonrepetitive pulse Ta = 25C 0.1 Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren't mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ). These characteristic curves must be derated linearly with increase in temperature. 0.01 0.1 1
Collector current
IC
VCEO max 10 100
Collector-emitter voltage
VCE (V)
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2006-11-13
TPCP8504
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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2006-11-13

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